فروشنده های PSMN1R9-25YLC,115
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مشخصات PSMN1R9-25YLC,115
- Manufacturer NXP USA Inc.
- Series -
- Packaging Cut Tape (CT)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 2.05mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 3504pF @ 12V
- FET Feature -
- Power Dissipation (Max) 141W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package LFPAK56, Power-SO8
- Package / Case SC-100, SOT-669
- Base Part Number PSMN1
- detail N-Channel 25V 100A (Tc) 141W (Tc) Surface Mount LFPAK56, Power-SO8
فروشنده های PSMN1R9-25YLC,115
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