FDV302P

FDV302P

FDV302P

در 2 فروشگاه

مشخصات فنی:
ManufacturerON Semiconductor
PackageTO-236-3, SC-59, SOT-23-3
Datasheet Mold Compound 12/Dec/2007
Description ---
تغییرات قیمت
مشخصات
  • Manufacturer ON Semiconductor
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type P-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 25V
  • Current - Continuous Drain (Id) @ 25°C 120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs 10Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 0.31nC @ 4.5V
  • Vgs (Max) ±8V
  • Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V
  • FET Feature -
  • Power Dissipation (Max) 350mW (Ta)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package SOT-23
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Base Part Number FDV30
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