دیتاشیت MJD44H11G
مشخصات دیتاشیت
نام دیتاشیت | D44H, D45H Datasheet |
---|---|
حجم فایل | 99.434 کیلوبایت |
نوع فایل | |
تعداد صفحات | 5 |
دانلود دیتاشیت D44H, D45H Datasheet |
D44H, D45H Datasheet Datasheet |
---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi MJD44H11G
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 1.75W
- Transition Frequency (fT): 85MHz
- DC Current Gain (hFE@Ic,Vce): 40@4A,1V
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@8A,400mA
- Package: TO-252
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Active
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 2W
- Frequency - Transition: 50MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Base Part Number: D44H
- detail: Bipolar (BJT) Transistor NPN 80V 10A 50MHz 2W Through Hole TO-220AB