دیتاشیت SQJ402EP-T1_GE3

SQJ402EP-T1_GE3

مشخصات دیتاشیت

نام دیتاشیت SQJ402EP-T1_GE3
حجم فایل 98.316 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

دانلود دیتاشیت SQJ402EP-T1_GE3

SQJ402EP-T1_GE3 Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Vishay Intertech SQJ402EP-T1_GE3
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 83W
  • Total Gate Charge (Qg@Vgs): 51nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 2289pF@40V
  • Continuous Drain Current (Id): 32A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,10A
  • Package: PowerPAK-SO-8
  • Manufacturer: Vishay Intertech