دیتاشیت SQJ402EP-T1_GE3
مشخصات دیتاشیت
| نام دیتاشیت | SQJ402EP-T1_GE3 |
|---|---|
| حجم فایل | 98.316 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت SQJ402EP-T1_GE3 |
SQJ402EP-T1_GE3 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SQJ402EP-T1_GE3
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 83W
- Total Gate Charge (Qg@Vgs): 51nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 2289pF@40V
- Continuous Drain Current (Id): 32A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,10A
- Package: PowerPAK-SO-8
- Manufacturer: Vishay Intertech
