دیتاشیت CPH5517-TL-E
مشخصات دیتاشیت
| نام دیتاشیت |
CPH5517
|
| حجم فایل |
409.251
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi CPH5517-TL-E
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Transistor Type:
1PCSNPN&1PCSPNP(共基极)
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Collector Current (Ic):
1A
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Power Dissipation (Pd):
900mW
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Transition Frequency (fT):
420MHz
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DC Current Gain (hFE@Ic,Vce):
200@100mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
430mV@10mA,500mA
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Package:
CPH-5
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
1A
-
Voltage - Collector Emitter Breakdown (Max):
50V
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Vce Saturation (Max) @ Ib, Ic:
430mV @ 10mA, 500mA
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
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Power - Max:
900mW
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Frequency - Transition:
420MHz
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
SOT-23-5 Thin, TSOT-23-5
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Supplier Device Package:
5-CPH
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Base Part Number:
CPH551
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detail:
Bipolar (BJT) Transistor Array NPN, PNP (Common Base) 50V 1A 420MHz 900mW Surface Mount 5-CPH
