BS170-D26Z
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | BS170 |
| Description | N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3 |
فروشنده های BS170-D26Z
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تغییرات قیمت
مشخصات BS170-D26Z
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi BS170-D26Z
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 830mW
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 40pF@10V
- Continuous Drain Current (Id) 500mA
- Gate Threshold Voltage (Vgs(th)@Id) 3V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 5Ω@10V,200mA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id 3V @ 1mA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
- FET Feature -
- Power Dissipation (Max) 830mW (Ta)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number BS170
- detail N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3
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