BC33740BU
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | BC337, BC338 |
| Description | Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BC33740BU
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 800mA
- Power Dissipation (Pd) 625mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 250@100mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 700mV@500mA,50mA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 800mA
- Voltage - Collector Emitter Breakdown (Max) 45V
- Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V
- Power - Max 625mW
- Frequency - Transition 100MHz
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package TO-92-3
- Base Part Number BC337
- detail Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92-3
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