FDH50N50-F133
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| Manufacturer | onsemi |
| Package | TO-247-3 |
| Datasheet | FDA50N50, FDH50N50 |
| Description | N-Channel 500V 48A (Tc) 625W (Tc) Through Hole TO-247-3 |
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مشخصات FDH50N50-F133
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDH50N50-F133
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 625W
- Total Gate Charge (Qg@Vgs) 137nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 6460pF@25V
- Continuous Drain Current (Id) 48A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 105mΩ@24A,10V
- Package TO-247
- Manufacturer onsemi
- Series UniFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 105mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 137nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 6460pF @ 25V
- FET Feature -
- Power Dissipation (Max) 625W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Package / Case TO-247-3
- Base Part Number FDH50
- detail N-Channel 500V 48A (Tc) 625W (Tc) Through Hole TO-247-3
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