FCHD125N65S3R0-F155
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| Manufacturer | onsemi |
| Package | TO-247-3 |
| Datasheet | FCHD125N65S3R0 |
| Description | N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-247 |
فروشنده های FCHD125N65S3R0-F155
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مشخصات FCHD125N65S3R0-F155
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FCHD125N65S3R0-F155
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 181W
- Total Gate Charge (Qg@Vgs) 46nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 1940pF@400V
- Continuous Drain Current (Id) 24A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@590uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 125mΩ@12A,10V
- Package TO-247
- Manufacturer onsemi
- Series SuperFET® III
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1940pF @ 400V
- FET Feature -
- Power Dissipation (Max) 181W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Package / Case TO-247-3
- Base Part Number FCHD12
- detail N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-247
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