FDS6875
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| Manufacturer | onsemi |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Datasheet | FDS6875 |
| Description | Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC |
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مشخصات FDS6875
- RoHS true
- Type 2 P-Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDS6875
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 900mW
- Total Gate Charge (Qg@Vgs) 31nC@5V
- Input Capacitance (Ciss@Vds) 2250pF@10V
- Continuous Drain Current (Id) 6A
- Gate Threshold Voltage (Vgs(th)@Id) 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 30mΩ@6A,4.5V
- Package SOP-8
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type 2 P-Channel (Dual)
- FET Feature Logic Level Gate
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 6A
- Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 10V
- Power - Max 900mW
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package 8-SOIC
- Base Part Number FDS68
- detail Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC
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