فروشنده های SSU1N60BTU-WS
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مشخصات SSU1N60BTU-WS
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 900mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 12Ohm @ 450mA, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 215pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I-PAK
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number SSU1N
- detail N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
فروشنده های SSU1N60BTU-WS
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