FDB12N50FTM-WS
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | FDB12N50F |
| Description | N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK |
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مشخصات FDB12N50FTM-WS
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDB12N50FTM-WS
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 165W
- Total Gate Charge (Qg@Vgs) 21nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 1.05nF@25V
- Continuous Drain Current (Id) 11.5A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 11pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 590mΩ@10V,6A
- Package D2PAK
- Manufacturer onsemi
- Series UniFET™
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 700mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1395pF @ 25V
- FET Feature -
- Power Dissipation (Max) 165W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D²PAK
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number FDB12
- detail N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK
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