FQT1N80TF-WS
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | ON Semiconductor |
| Package | TO-261-3 |
| Datasheet | FQT1N80TF_WS |
| Description | N-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3 |
فروشنده های FQT1N80TF-WS
فروشگاهی یافت نشد
مشخصات FQT1N80TF-WS
- Manufacturer ON Semiconductor
- Series QFET®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 20Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.1W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223-3
- Package / Case TO-261-3
- Base Part Number FQT1
- detail N-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3
فروشنده های FQT1N80TF-WS
فروشگاهی یافت نشد