فروشنده های PSMN7R6-60XSQ
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تغییرات قیمت
مشخصات PSMN7R6-60XSQ
- Manufacturer NXP USA Inc.
- Series -
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 51.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 7.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 4.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 38.7nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 2651pF @ 30V
- FET Feature -
- Power Dissipation (Max) 46W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220F
- Package / Case TO-220-3 Full Pack, Isolated Tab
- Base Part Number PSMN7
- detail N-Channel 60V 51.5A (Tc) 46W (Tc) Through Hole TO-220F
فروشنده های PSMN7R6-60XSQ
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