FQP19N20
در 3 فروشگاه
| Manufacturer | ON Semiconductor |
| Package | TO-220-3 |
| Datasheet | FQP19N20 |
| Description | N-Channel 200V 19.4A (Tc) 140W (Tc) Through Hole TO-220-3 |
فروشنده های FQP19N20
تغییرات قیمت
مشخصات FQP19N20
- Manufacturer ON Semiconductor
- Series QFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 19.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 150mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
- FET Feature -
- Power Dissipation (Max) 140W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FQP1
- detail N-Channel 200V 19.4A (Tc) 140W (Tc) Through Hole TO-220-3