FQP19N20

FQP19N20

در 3 فروشگاه

مشخصات فنی:
Manufacturer ON Semiconductor
Package TO-220-3
Datasheet FQP19N20
Description N-Channel 200V 19.4A (Tc) 140W (Tc) Through Hole TO-220-3

فروشنده های FQP19N20

تغییرات قیمت

مشخصات FQP19N20

  • Manufacturer ON Semiconductor
  • Series QFET®
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 200V
  • Current - Continuous Drain (Id) @ 25°C 19.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 150mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 140W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220-3
  • Package / Case TO-220-3
  • Base Part Number FQP1
  • detail N-Channel 200V 19.4A (Tc) 140W (Tc) Through Hole TO-220-3

فروشنده های FQP19N20