دیتاشیت ATP304-TL-H
مشخصات دیتاشیت
| نام دیتاشیت |
ATP304
|
| حجم فایل |
391.431
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi ATP304-TL-H
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Power Dissipation (Pd):
90W
-
Total Gate Charge (Qg@Vgs):
250nC@10V
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Input Capacitance (Ciss@Vds):
13000pF@20V
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Continuous Drain Current (Id):
100A
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Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
6.5mΩ@50A,10V
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Package:
-
-
Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
6.5mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
250nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
13000pF @ 20V
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FET Feature:
-
-
Power Dissipation (Max):
90W (Tc)
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Surface Mount
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Supplier Device Package:
ATPAK
-
Package / Case:
ATPAK (2 leads+tab)
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Base Part Number:
ATP304
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detail:
P-Channel 60V 100A (Ta) 90W (Tc) Surface Mount ATPAK
