دیتاشیت FQT1N80TF-WS

FQT1N80TF_WS

مشخصات دیتاشیت

نام دیتاشیت FQT1N80TF_WS
حجم فایل 1244.653 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت FQT1N80TF_WS

FQT1N80TF_WS Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-3
  • Base Part Number: FQT1
  • detail: N-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3

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