MJE13007G
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | MJE13007 |
| Description | Bipolar (BJT) Transistor NPN 400V 8A 14MHz 80W Through Hole TO-220AB |
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مشخصات MJE13007G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJE13007G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 8A
- Power Dissipation (Pd) 80W
- Transition Frequency (fT) 14MHz
- DC Current Gain (hFE@Ic,Vce) 5@5A,5V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 3V@8A,2A
- Package TO-220
- Manufacturer onsemi
- Series SWITCHMODE™
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 8A
- Voltage - Collector Emitter Breakdown (Max) 400V
- Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A, 5V
- Power - Max 80W
- Frequency - Transition 14MHz
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number MJE13
- detail Bipolar (BJT) Transistor NPN 400V 8A 14MHz 80W Through Hole TO-220AB
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