دیتاشیت FDB12N50FTM-WS
مشخصات دیتاشیت
نام دیتاشیت |
FDB12N50F
|
حجم فایل |
786.6
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
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Manufacturer:
ON Semiconductor
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Series:
UniFET™
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
500V
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Current - Continuous Drain (Id) @ 25°C:
11.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
700mOhm @ 6A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
1395pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
165W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
FDB12
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detail:
N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK