FQA13N50C-F109
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| Manufacturer | onsemi |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | FQA13N50C-F109 |
| Description | N-Channel 500V 13.5A (Tc) 218W (Tc) Through Hole TO-3P |
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مشخصات FQA13N50C-F109
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQA13N50C-F109
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 218W
- Total Gate Charge (Qg@Vgs) 56nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 2055pF@25V
- Continuous Drain Current (Id) 13.5A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 20pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 390mΩ@10V,6.75A
- Package TO-3P
- Manufacturer onsemi
- Series QFET®
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 480mOhm @ 6.75A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 2055pF @ 25V
- FET Feature -
- Power Dissipation (Max) 218W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-3P
- Package / Case TO-3P-3, SC-65-3
- Base Part Number FQA1
- detail N-Channel 500V 13.5A (Tc) 218W (Tc) Through Hole TO-3P
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