دیتاشیت FQP17P06 17P06 ماسفت کانال P
مشخصات دیتاشیت
نام دیتاشیت | FQP17P06 |
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حجم فایل | 559.862 کیلوبایت |
نوع فایل | |
تعداد صفحات | 10 |
دانلود دیتاشیت FQP17P06 |
FQP17P06 Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FQP1
- detail: P-Channel 60V 17A (Tc) 79W (Tc) Through Hole TO-220-3