دیتاشیت FQP27P06 ماسفت کانال P
مشخصات دیتاشیت
نام دیتاشیت | FQP27P06 |
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حجم فایل | 926.92 کیلوبایت |
نوع فایل | |
تعداد صفحات | 8 |
دانلود دیتاشیت FQP27P06 |
FQP27P06 Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FQP2
- detail: P-Channel 60V 27A (Tc) 120W (Tc) Through Hole TO-220-3