TO220B03 Pkg Drawing Datasheet

TO220B03 Pkg Drawing

Datasheet specifications

Datasheet's name TO220B03 Pkg Drawing
File size 99.003 KB
File type pdf
Number of pages 1

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Other documentations

FJP13007 5 pages

Technical specifications

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
  • Power - Max: 80W
  • Frequency - Transition: 4MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
  • Base Part Number: FJP13007
  • detail: Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole TO-220-3

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