دیتاشیت BBL4001-1E
مشخصات دیتاشیت
| نام دیتاشیت |
BBL4001
|
| حجم فایل |
233.235
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi BBL4001-1E
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Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
TO-220F
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
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FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
-
Current - Continuous Drain (Id) @ 25°C:
74A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
-
Rds On (Max) @ Id, Vgs:
6.1mOhm @ 37A, 10V
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Vgs(th) (Max) @ Id:
2.6V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
135nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
6900pF @ 20V
-
FET Feature:
-
-
Power Dissipation (Max):
2W (Ta), 35W (Tc)
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220-3 Fullpack/TO-220F-3SG
-
Package / Case:
TO-220-3 Full Pack
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Base Part Number:
BBL400
-
detail:
N-Channel 60V 74A (Ta) 2W (Ta), 35W (Tc) Through Hole TO-220-3 Fullpack/TO-220F-3SG
