دیتاشیت BMS3004-1E
مشخصات دیتاشیت
| نام دیتاشیت |
BMS3004
|
| حجم فایل |
271.11
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi BMS3004-1E
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Power Dissipation (Pd):
2W
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Drain Source Voltage (Vdss):
75V
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Continuous Drain Current (Id):
68A
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Gate Threshold Voltage (Vgs(th)@Id):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
8.5mΩ@10V,34A
-
Package:
TO-220F
-
Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tube
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
75V
-
Current - Continuous Drain (Id) @ 25°C:
68A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
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Rds On (Max) @ Id, Vgs:
8.5mOhm @ 34A, 10V
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Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
300nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
13400pF @ 20V
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FET Feature:
-
-
Power Dissipation (Max):
2W (Ta), 40W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220F-3SG
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Package / Case:
TO-220-3 Full Pack
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Base Part Number:
BMS30
-
detail:
P-Channel 75V 68A (Ta) 2W (Ta), 40W (Tc) Through Hole TO-220F-3SG
