- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت FQU2N90TU-WS
دیتاشیت FQU2N90TU-WS
مشخصات دیتاشیت
نام دیتاشیت | FQD2N90/FQU2N90 |
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حجم فایل | 2086.332 کیلوبایت |
نوع فایل | |
تعداد صفحات | 8 |
دانلود دیتاشیت FQD2N90/FQU2N90 |
FQD2N90/FQU2N90 Datasheet |
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مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQU2N90TU-WS
- Package: TO-251-3
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number: FQU2
- detail: N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK