دیتاشیت HUF75639P3

HUF75639G3, P3, S3, S3S

مشخصات دیتاشیت

نام دیتاشیت HUF75639G3, P3, S3, S3S
حجم فایل 563.559 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت HUF75639G3, P3, S3, S3S

HUF75639G3, P3, S3, S3S Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: UltraFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: HUF75
  • detail: N-Channel 100V 56A (Tc) 200W (Tc) Through Hole TO-220-3