دیتاشیت HGTP5N120BND
مشخصات دیتاشیت
| نام دیتاشیت | HGTG5N120BND, HGTP5N120BND |
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| حجم فایل | 303.028 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت HGTG5N120BND, HGTP5N120BND |
HGTG5N120BND, HGTP5N120BND Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Tube
- Part Status: Not For New Designs
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 21A
- Current - Collector Pulsed (Icm): 40A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
- Power - Max: 167W
- Switching Energy: 450µJ (on), 390µJ (off)
- Input Type: Standard
- Gate Charge: 53nC
- Td (on/off) @ 25°C: 22ns/160ns
- Test Condition: 960V, 5A, 25Ohm, 15V
- Reverse Recovery Time (trr): 65ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Base Part Number: HGTP5N120
- detail: IGBT NPT 1200V 21A 167W Through Hole TO-220-3
