RFP30N06LE 数据手册
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技术规格
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Vgs (Max): +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: RFP30
- detail: N-Channel 60V 30A (Ta) 96W (Tc) Through Hole TO-220-3