FQP32N12V2 Datasheet

TO220B03 Pkg Drawing

Datasheet specifications

Datasheet's name TO220B03 Pkg Drawing
File size 99.003 KB
File type pdf
Number of pages 1

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Technical specifications

  • Manufacturer: ON Semiconductor
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FQP3
  • detail: N-Channel 120V 32A (Tc) 150W (Tc) Through Hole TO-220-3

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