HGTP3N60A4 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
TO220B03 Pkg Drawing
|
|
حجم فایل
|
99.003
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
1
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/IGBTs
-
Datasheet:
onsemi HGTP3N60A4
-
Package:
TO-220AB-3
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Active
-
IGBT Type:
-
-
Voltage - Collector Emitter Breakdown (Max):
600V
-
Current - Collector (Ic) (Max):
17A
-
Current - Collector Pulsed (Icm):
40A
-
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 3A
-
Power - Max:
70W
-
Switching Energy:
37µJ (on), 25µJ (off)
-
Input Type:
Standard
-
Gate Charge:
21nC
-
Td (on/off) @ 25°C:
6ns/73ns
-
Test Condition:
390V, 3A, 50Ohm, 15V
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-220-3
-
Supplier Device Package:
TO-220-3
-
Base Part Number:
HGTP3N60
-
detail:
IGBT 600V 17A 70W Through Hole TO-220-3