دیتاشیت FQU13N06LTU-WS

FQD13N06L, FQU13N06L

مشخصات دیتاشیت

نام دیتاشیت FQD13N06L, FQU13N06L
حجم فایل 1033.103 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FQD13N06L, FQU13N06L

FQD13N06L, FQU13N06L Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FQU1
  • detail: N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK

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