دیتاشیت FCH023N65S3-F155
مشخصات دیتاشیت
| نام دیتاشیت |
FCH023N65S3
|
| حجم فایل |
505.055
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
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Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FCH023N65S3-F155
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Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
TO-247
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Manufacturer:
onsemi
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Series:
SuperFET® III
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650V
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Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
23mOhm @ 37.5A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 7.5mA
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Gate Charge (Qg) (Max) @ Vgs:
222nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
7160pF @ 400V
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FET Feature:
Super Junction
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Power Dissipation (Max):
595W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-247 Long Leads
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Package / Case:
TO-247-3
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Base Part Number:
FCH02
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detail:
N-Channel 650V 75A (Tc) 595W (Tc) Through Hole TO-247 Long Leads
